A convenient method to fabricate multilayer interconnections for microdevices

Jia Li, Supin Chen, C. Kim
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Abstract

We report a new method to fabricate multilayer interconnections without requiring wet or dry etching or deposition of insulating layers. Three levels of electrical connections are obtained by merely repeating deposition, photolithography, and anodization of a metal layer. Without the need to etch metal layers or deposit and etch insulation layers, the overall process is simple, cheap, safe, and of low temperature. While the utility is general for a wide variety of microdevices and electronics, in this paper we demonstrate one application by developing a low-cost fabrication of a large-array electrowetting-on-dielectric (EWOD) chip that requires three metal layers.
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一种制备微器件多层互连的简便方法
我们报道了一种制造多层互连的新方法,而不需要湿或干蚀刻或沉积绝缘层。仅仅通过重复沉积、光刻和金属层阳极氧化就可以获得三个层次的电连接。不需要蚀刻金属层或沉积和蚀刻绝缘层,整体工艺简单,廉价,安全,低温。虽然该实用程序适用于各种微器件和电子产品,但在本文中,我们通过开发一种低成本制造大阵列电介质电润湿(EWOD)芯片的应用,该芯片需要三个金属层。
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