Extended-Gate FET cortisol sensor for stress disorders based on aptamers-decorated graphene electrode: Fabrication, Experiments and Unified Analog Predictive Modeling

L. Capua, S. Sheibani, S. Kamaei, J. Zhang, A. Ionescu
{"title":"Extended-Gate FET cortisol sensor for stress disorders based on aptamers-decorated graphene electrode: Fabrication, Experiments and Unified Analog Predictive Modeling","authors":"L. Capua, S. Sheibani, S. Kamaei, J. Zhang, A. Ionescu","doi":"10.1109/IEDM13553.2020.9372063","DOIUrl":null,"url":null,"abstract":"In this work we report the fabrication, characterization and validation of a cortisol biosensor, together with a unified predictive calibrated model. We demonstrated the possibility of using a classical submicron semiconductor FET as the transducer for a cortisol biosensor, extending its gate with a graphene on platinum electrode decorated with cortisol specific aptamers. The sensor outperforms the so far any reported cortisol sensors, in terms of performance and integration capability: (i) we report sensor validation over 4 orders of concertation (1 nM - 10 μM, matching human sweat concentration range), (ii) with excellent voltage (14.7 mV/dec.) and current (80% relative change with respect baseline) sensitivity, (iii) low drift, smaller than 10 mV/h, (iv) low power consumption (sub-nW DC power), (v) record low detection limit (LOD) for cortisol of 0.2nM, and (vi) selectivity over other hormones such as testosterone. Moreover, we have developed and validated the first unified compact analog predictive calibrated model for cortisol FET sensors based on experimental data, valid from weak to strong inversion, and able to capture the output current dependence on hormone concentrations. In addition, this model is accurate in the prediction of ID, gm and transconductance efficiency, ID/gm, enabling simulation and optimization of analog design readout, together with power and signal-to-noise ratio trade-offs.","PeriodicalId":415186,"journal":{"name":"2020 IEEE International Electron Devices Meeting (IEDM)","volume":"24 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2020-12-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 IEEE International Electron Devices Meeting (IEDM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM13553.2020.9372063","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
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Abstract

In this work we report the fabrication, characterization and validation of a cortisol biosensor, together with a unified predictive calibrated model. We demonstrated the possibility of using a classical submicron semiconductor FET as the transducer for a cortisol biosensor, extending its gate with a graphene on platinum electrode decorated with cortisol specific aptamers. The sensor outperforms the so far any reported cortisol sensors, in terms of performance and integration capability: (i) we report sensor validation over 4 orders of concertation (1 nM - 10 μM, matching human sweat concentration range), (ii) with excellent voltage (14.7 mV/dec.) and current (80% relative change with respect baseline) sensitivity, (iii) low drift, smaller than 10 mV/h, (iv) low power consumption (sub-nW DC power), (v) record low detection limit (LOD) for cortisol of 0.2nM, and (vi) selectivity over other hormones such as testosterone. Moreover, we have developed and validated the first unified compact analog predictive calibrated model for cortisol FET sensors based on experimental data, valid from weak to strong inversion, and able to capture the output current dependence on hormone concentrations. In addition, this model is accurate in the prediction of ID, gm and transconductance efficiency, ID/gm, enabling simulation and optimization of analog design readout, together with power and signal-to-noise ratio trade-offs.
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基于适配体修饰石墨烯电极的应激障碍扩展栅极场效应晶体管皮质醇传感器:制造、实验和统一模拟预测建模
在这项工作中,我们报告了皮质醇生物传感器的制造,表征和验证,以及统一的预测校准模型。我们展示了使用经典的亚微米半导体场效应晶体管作为皮质醇生物传感器的换能器的可能性,并将其栅极扩展为石墨烯在铂电极上,并用皮质醇特异性适配体装饰。该传感器在性能和集成能力方面优于迄今为止任何报道的皮质醇传感器:(i)我们报告了传感器在4个量级浓度(1 nM - 10 μM,与人体汗液浓度范围相匹配)下的验证,(ii)具有优异的电压(14.7 mV/ 12)和电流(与基线相对变化80%)灵敏度,(iii)低漂移,小于10 mV/h, (iv)低功耗(亚nw直流功率),(v)对皮质醇的最低检测限(LOD)为0.2nM, (vi)优于其他激素(如睾酮)。此外,我们基于实验数据开发并验证了第一个统一的紧凑模拟预测校准皮质醇FET传感器模型,该模型从弱到强反转有效,并且能够捕获对激素浓度的输出电流依赖。此外,该模型在预测ID, gm和跨导效率,ID/gm方面是准确的,可以模拟和优化模拟设计读出,以及功率和信噪比权衡。
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