P. Kurz, Hans-Juergen Mann, M. Antoni, W. Singer, M. Muhlbeyer, F. Melzer, U. Dinger, M. Weiser, S. Stacklies, G. Seitz, F. Haidl, E. Sohmen, W. Kaiser
{"title":"Optics for EUV lithography","authors":"P. Kurz, Hans-Juergen Mann, M. Antoni, W. Singer, M. Muhlbeyer, F. Melzer, U. Dinger, M. Weiser, S. Stacklies, G. Seitz, F. Haidl, E. Sohmen, W. Kaiser","doi":"10.1109/IMNC.2000.872750","DOIUrl":null,"url":null,"abstract":"Extreme Ultraviolet Lithography (EUVL), using 13 nm radiation, has a high probability to become the Next Generation Lithography of choice for resolutions of 50 nm and below. The work at CARL ZEISS focusses on the development of optical system design and core technologies necessary for the industrialization of EUVL optical systems.","PeriodicalId":270640,"journal":{"name":"Digest of Papers Microprocesses and Nanotechnology 2000. 2000 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.00EX387)","volume":"20 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2000-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"18","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Digest of Papers Microprocesses and Nanotechnology 2000. 2000 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.00EX387)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IMNC.2000.872750","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 18
Abstract
Extreme Ultraviolet Lithography (EUVL), using 13 nm radiation, has a high probability to become the Next Generation Lithography of choice for resolutions of 50 nm and below. The work at CARL ZEISS focusses on the development of optical system design and core technologies necessary for the industrialization of EUVL optical systems.
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