{"title":"Process parameters affecting plasma enhanced crystallization of a-Si:H using a PECVD equipment [TFTs]","authors":"R. García, M. Estrada, A. Cerdeira, L. Reséndiz","doi":"10.1109/MIEL.2002.1003308","DOIUrl":null,"url":null,"abstract":"Reports low temperature polysilicon layers obtained by plasma enhanced crystallization performed in the same PECVD system where the a-Si:H layers are deposited. We analyze the effects of phosphorous concentration in the layer, hydrogen dilution of silane, temperature of the hydrogen plasma process and annealing temperature on the crystallization time, surface texture and resistivity of the layers. Layers were characterized electrically, by X-ray diffractometry and by atomic force microscopy. The characteristics of the polycrystalline films are discussed and compared with those of polycrystalline layers obtained by other methods.","PeriodicalId":221518,"journal":{"name":"2002 23rd International Conference on Microelectronics. Proceedings (Cat. No.02TH8595)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2002 23rd International Conference on Microelectronics. Proceedings (Cat. No.02TH8595)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MIEL.2002.1003308","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Reports low temperature polysilicon layers obtained by plasma enhanced crystallization performed in the same PECVD system where the a-Si:H layers are deposited. We analyze the effects of phosphorous concentration in the layer, hydrogen dilution of silane, temperature of the hydrogen plasma process and annealing temperature on the crystallization time, surface texture and resistivity of the layers. Layers were characterized electrically, by X-ray diffractometry and by atomic force microscopy. The characteristics of the polycrystalline films are discussed and compared with those of polycrystalline layers obtained by other methods.
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