F. Ujhelyi, A. Pongrácz, Á. Kun, J. Szívós, B. Bartal, B. Fodor, A. Bölcskei-Molnár, G. Nadudvari, J. Byrnes, L. Rubin
{"title":"Mid-low energy implantation tilt angle monitoring with photomodulated reflectance measurement","authors":"F. Ujhelyi, A. Pongrácz, Á. Kun, J. Szívós, B. Bartal, B. Fodor, A. Bölcskei-Molnár, G. Nadudvari, J. Byrnes, L. Rubin","doi":"10.1109/ASMC.2019.8791776","DOIUrl":null,"url":null,"abstract":"Photo-modulated Reflectivity Measurement (PMR) is an excellent technology for ion implantation dose and tilt angle monitoring of as-implanted pre-annealed production wafers. The SEMILAB PMR-3000 is a unit for in-line monitoring of ion implantation prior to the thermal annealing process step. The enhanced optical system ensures accurate measurement over the whole dose range without insensitive regions in the mid-dose range. Typical dose detectability is <0.5% (1 σ). The resolution of tilt angle detection can reach 0.1° (1 σ). This sensitivity to tilt angle fulfills the requirements of state of the art process control requirements.","PeriodicalId":287541,"journal":{"name":"2019 30th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-05-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 30th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ASMC.2019.8791776","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
Photo-modulated Reflectivity Measurement (PMR) is an excellent technology for ion implantation dose and tilt angle monitoring of as-implanted pre-annealed production wafers. The SEMILAB PMR-3000 is a unit for in-line monitoring of ion implantation prior to the thermal annealing process step. The enhanced optical system ensures accurate measurement over the whole dose range without insensitive regions in the mid-dose range. Typical dose detectability is <0.5% (1 σ). The resolution of tilt angle detection can reach 0.1° (1 σ). This sensitivity to tilt angle fulfills the requirements of state of the art process control requirements.