Low temperature MOS device modeling

S. Selberherr, E. Langer
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引用次数: 21

Abstract

The state of the art in self-consistent numerical low-temperature MOS modeling is reviewed. The physical assumptions required to describe carrier transport at liquid-nitrogen temperature are discussed. Particular emphasis is put on the models for space charge (impurity freeze-out), carrier mobility (temperature dependence of scattering mechanisms at a semiconductor-insulator interface), and carrier generation-recombination (impact ionization). The differences with regard to the numerical methods required for the solution of low-temperature models compared to room-temperature models are explained. Typical results obtained with the simulator MINIMOS 4 are presented.<>
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低温MOS器件建模
综述了自洽低温MOS数值模拟的研究现状。讨论了描述液氮温度下载流子输运所需的物理假设。特别强调的是空间电荷(杂质冻结),载流子迁移率(半导体-绝缘体界面散射机制的温度依赖性)和载流子生成-重组(冲击电离)的模型。解释了低温模型与室温模型求解所需的数值方法的差异。本文给出了用MINIMOS 4仿真器获得的典型结果
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