T. Rudenko, V. Kilchytska, M. Arshad, J. Raskin, A. Nazarov, D. Flandre
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引用次数: 3
Abstract
In this work, we study the effect of the drain voltage on the threshold voltage extraction in long-channel MOSFETs by the transconductance and transconductance-to-current-ratio change methods, using analytical modeling and experimental data obtained on UTB SOI MOSFETs.
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