M. Delaney, C. Chou, L. Larson, J. Jensen, D. Deakin, A. Brown, W. Hooper, M. Thompson, L. McCray, S. Rosenbaum
{"title":"GaAs MESFET digital integrated circuits fabricated with low temperature buffer technology","authors":"M. Delaney, C. Chou, L. Larson, J. Jensen, D. Deakin, A. Brown, W. Hooper, M. Thompson, L. McCray, S. Rosenbaum","doi":"10.1109/CICC.1989.56782","DOIUrl":null,"url":null,"abstract":"High-performance digital integrated circuits have been fabricated with low-temperature buffer GaAs MESFET technology. The materials structure eliminates side-gating and light sensitivity, and improves FET performance. Individual transistors with a 0.2-μm gate length have a transconductance gm of 600 mS/mm and an extrapolated cutoff frequency fT of 80 GHz. Static SCFL frequency dividers fabricated in this technology exhibit a maximum clock rate of 22 GHz","PeriodicalId":165054,"journal":{"name":"1989 Proceedings of the IEEE Custom Integrated Circuits Conference","volume":"44 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1989-05-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"1989 Proceedings of the IEEE Custom Integrated Circuits Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CICC.1989.56782","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
High-performance digital integrated circuits have been fabricated with low-temperature buffer GaAs MESFET technology. The materials structure eliminates side-gating and light sensitivity, and improves FET performance. Individual transistors with a 0.2-μm gate length have a transconductance gm of 600 mS/mm and an extrapolated cutoff frequency fT of 80 GHz. Static SCFL frequency dividers fabricated in this technology exhibit a maximum clock rate of 22 GHz
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