The total dose effect on two types of CMOS devices

Abstract

In this paper the radiation response of two types of CMOS devices exposed to /sup 60/Co is studied. The two types of CMOS devices were denoted as hardened and unhardened, respectively. Using MOSFET I-V characteristics, threshold-voltage shifts dependence on the radiation dose, voltage shifts due to radiation-induced interface traps and oxide traps dependence on the radiation dose and the density of radiation-induced interface traps dependence on the radiation dose, were analysed under two different dose rates. The dependence of a CMOS inverter's transfer-voltage shifts on radiation dose was analysed also.