{"title":"Feasibility of new ARC using PECVD for both KrF and ArF lithography","authors":"Y. Kim, Junghyeon Lee, Hanku Cho, J. Moon","doi":"10.1109/IMNC.2000.872645","DOIUrl":null,"url":null,"abstract":"We developed and confirmed the feasibility of a new carbon ARC (CARC) for both KrF and ArF lithography. CARC has high conformability on topography and is easily removable during the resist stripping process. Also good ARC performance and etch characteristics of CARC with sublayers are obtained. Thus, CARC is a promising alternative to SiON ARC and organic ARC.","PeriodicalId":270640,"journal":{"name":"Digest of Papers Microprocesses and Nanotechnology 2000. 2000 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.00EX387)","volume":"108 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2000-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Digest of Papers Microprocesses and Nanotechnology 2000. 2000 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.00EX387)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IMNC.2000.872645","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
We developed and confirmed the feasibility of a new carbon ARC (CARC) for both KrF and ArF lithography. CARC has high conformability on topography and is easily removable during the resist stripping process. Also good ARC performance and etch characteristics of CARC with sublayers are obtained. Thus, CARC is a promising alternative to SiON ARC and organic ARC.
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