Michel Nagel, Ivana Kovacevic-Badstuebner, Race Salvatore, D. Popescu, B. Popescu, D. Romano, Giulio Antonini, U. Grossner
{"title":"Stability Analysis of Parallel SiC power MOSFETs based on a Virtual Prototype","authors":"Michel Nagel, Ivana Kovacevic-Badstuebner, Race Salvatore, D. Popescu, B. Popescu, D. Romano, Giulio Antonini, U. Grossner","doi":"10.1109/ISPSD57135.2023.10147660","DOIUrl":null,"url":null,"abstract":"This paper presents a novel modeling approach for assessing the stability of SiC power MOSFETs connected in parallel considering the voltage-dependent MOSFET C-V and I-V characteristics, as well as the frequency-dependent PCB layout parasitics. It is shown that the switching circuit is time-variant and hence, has to be analyzed both in the time-and frequency-domain to have a complete understanding of the (un)stable oscillations. Such a two-domain analysis can be beneficial for designing optimized circuits with parallel SiC power MOSFETs.","PeriodicalId":344266,"journal":{"name":"2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD)","volume":"104 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2023-05-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISPSD57135.2023.10147660","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
This paper presents a novel modeling approach for assessing the stability of SiC power MOSFETs connected in parallel considering the voltage-dependent MOSFET C-V and I-V characteristics, as well as the frequency-dependent PCB layout parasitics. It is shown that the switching circuit is time-variant and hence, has to be analyzed both in the time-and frequency-domain to have a complete understanding of the (un)stable oscillations. Such a two-domain analysis can be beneficial for designing optimized circuits with parallel SiC power MOSFETs.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
