Functionality Enhanced Memories for Edge-AI Embedded Systems

A. Levisse, M. Rios, W. Simon, P. Gaillardon, David Atienza Alonso
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引用次数: 4

Abstract

With the surge in complexity of edge workloads, it appeared in the scientific community that such workloads cannot be anymore overflown to the cloud due to the huge edge device to server communication energy cost and the high energy consumption induced in high end server infrastructure. In this context, edge devices must be able to efficiently process complex data-intensive workloads bringing in the concept of Edge AI. However, current architectures show poor energy efficiency while running data intensive workloads. While the community looks toward the integration of new memory architectures using emerging resistive memories and new specific accelerators, we propose a new concept to boost the energy efficiency of Edge systems running data intensive workloads: Functionality Enhanced Memories (FEM). FEM consist on a memory architecture with new functionalities at a decent area overhead cost. In this work, we demonstrate the feasibility of native transpose access for 1Transistor-1RRAM bitcells leveraging three independent gates transistors. Based on that, we thereby propose a concept of FEM-enabled Edge system embedding the proposed native transpose access RRAM-based memory architecture and an in-SRAM computing architecture (the BLADE).
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Edge-AI嵌入式系统的功能增强存储器
随着边缘工作负载复杂性的激增,由于边缘设备到服务器通信的巨大能量成本和高端服务器基础设施的高能耗,这些工作负载无法再溢出到云端,这在科学界已经出现。在这种情况下,边缘设备必须能够有效地处理复杂的数据密集型工作负载,从而引入边缘人工智能的概念。然而,当前的架构在运行数据密集型工作负载时表现出较低的能源效率。当社区期望使用新兴的电阻式存储器和新的特定加速器集成新的存储器架构时,我们提出了一个新概念,以提高运行数据密集型工作负载的边缘系统的能效:功能性增强存储器(FEM)。FEM建立在一个具有新功能的内存架构上,开销很小。在这项工作中,我们证明了利用三个独立的栅极晶体管对1Transistor-1RRAM位单元进行本机转置访问的可行性。在此基础上,我们提出了一种基于fem的边缘系统概念,该系统嵌入了基于rram的本机转置访问内存架构和sram内计算架构(BLADE)。
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