A. Goyal, J. Whitfield, Changsoo Hong, C. Gill, C. Rouying Zhan, V. Kushner, A. Gendron, S. Contractor
{"title":"Unique ESD failure mechanism of high voltage LDMOS transistors for very fast transients","authors":"A. Goyal, J. Whitfield, Changsoo Hong, C. Gill, C. Rouying Zhan, V. Kushner, A. Gendron, S. Contractor","doi":"10.1109/RELPHY.2008.4558982","DOIUrl":null,"url":null,"abstract":"We have identified and explained a unique ESD breakdown mechanism of high voltage 80V LDMOS structures for very fast CDM transients. The device was protected against observed damage by placing a zener across the gate and source which prevents the observed voltage build up at the gate of the LDMOS.","PeriodicalId":187696,"journal":{"name":"2008 IEEE International Reliability Physics Symposium","volume":"62 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2008-07-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2008 IEEE International Reliability Physics Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RELPHY.2008.4558982","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 7
Abstract
We have identified and explained a unique ESD breakdown mechanism of high voltage 80V LDMOS structures for very fast CDM transients. The device was protected against observed damage by placing a zener across the gate and source which prevents the observed voltage build up at the gate of the LDMOS.
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