SOI CMOS humidity sensor based on MWCNTs/MMA composite films. On the necessary verification of fabrication stages

M. Paun, C. Falco, F. Udrea
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引用次数: 2

Abstract

A humidity sensor, which is part of an air quality sensor system, based on MWCNTs/MMA composite doped with KOH has been studied. A standard SOI CMOS process, with only one post-processing step for the membrane etching, was used to fabricate the sensor presented. In order to have a homogeneous distribution of the CNTs in the solution, the tip sonication method was employed. The current voltage and resistance voltage characteristics have been investigated.
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基于MWCNTs/MMA复合薄膜的SOI CMOS湿度传感器。对制造阶段进行必要的验证
本文研究了一种基于掺杂KOH的MWCNTs/MMA复合材料的空气质量传感器。采用标准的SOI CMOS工艺,只有一个后处理步骤的膜蚀刻,来制作传感器。为了使碳纳米管在溶液中均匀分布,采用尖端超声方法。研究了电流电压和电阻电压的特性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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