Deep trench capacitor based step-up and step-down DC/DC converters in 32nm SOI with opportunistic current borrowing and fast DVFS capabilities

A. Paul, Dong Jiao, S. Sapatnekar, C. Kim
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引用次数: 12

Abstract

A switched capacitor step-down converter fabricated in 32nm CMOS achieves a 5X improvement in response time for fast dynamic voltage and frequency scaling (DVFS). We also present a step-up converter based on a bi-directional voltage doubler, which is capable of reducing supply noise up to 45% by opportunistically borrowing current from adjacent idle power domains. Using ultra-high density deep trench capacitors, we are able to achieve an output power density of 2.78W/mm2 at a peak efficiency of 85% from the step-down converter and 0.9W/mm2 at a peak efficiency of 82% from the voltage doubler.
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基于深沟电容的32nm SOI升压和降压DC/DC转换器,具有机会电流借用和快速DVFS功能
采用32nm CMOS制造的开关电容降压变换器实现了快速动态电压和频率缩放(DVFS)的响应时间提高5倍。我们还提出了一种基于双向倍压器的升压变换器,该变换器能够通过从相邻的空闲功率域投机地借用电流来降低高达45%的电源噪声。使用超高密度深沟电容器,降压变换器的输出功率密度为2.78W/mm2,峰值效率为85%,倍增器的输出功率密度为0.9W/mm2,峰值效率为82%。
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