Hydrogen radical treatment for indium surface oxide removal and re-oxidation behaviour

K. Furuyama, K. Yamanaka, E. Higurashi, T. Suga
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引用次数: 4

Abstract

This study investigates the effect of hydrogen radical treatment on indium surface oxide removal, and the observation of re-oxidation post treatment. It was found that hydrogen radical treatment successfully removes indium surface oxide at temperatures as low as 170 °C, and prevents re-oxidation compared to active surfaces obtained by bombardment.
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氢自由基处理对铟表面氧化去除及再氧化行为的影响
本研究考察了氢自由基处理对铟表面氧化去除的影响,并观察了处理后的再氧化情况。研究发现,在低至170°C的温度下,氢自由基处理成功地去除了铟表面的氧化物,并且与轰击获得的活性表面相比,可以防止再氧化。
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