{"title":"The influence of SI-GaAs crystal property on device characteristic","authors":"Xiukun He, Q. Ru, Li Ding","doi":"10.1109/ICSICT.1998.785981","DOIUrl":null,"url":null,"abstract":"In this paper we have investigated the characteristics of undoped SI-GaAs crystals and carried out related experiments concerning device processes. We have analyzed the relationship between the material and device properties and studied the effect of the various parameters and their distribution in the SI-GaAs crystal on the device characteristics.","PeriodicalId":286980,"journal":{"name":"1998 5th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.98EX105)","volume":"4 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1998-10-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"1998 5th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.98EX105)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICSICT.1998.785981","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
In this paper we have investigated the characteristics of undoped SI-GaAs crystals and carried out related experiments concerning device processes. We have analyzed the relationship between the material and device properties and studied the effect of the various parameters and their distribution in the SI-GaAs crystal on the device characteristics.
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