{"title":"Measurement point selection for in-operation wear-out monitoring","authors":"Urban Ingelsson, Shih-Yen Chang, E. Larsson","doi":"10.1109/DDECS.2011.5783115","DOIUrl":null,"url":null,"abstract":"In recent IC designs, the risk of early failure due to electromigration wear-out has increased due to reduced feature dimensions. To give a warning of impending failure, wear-out monitoring approaches have included delay measurement circuitry on-chip. Due to the high cost of delay measurement circuitry this paper presents a method to reduce the number of necessary measurement points. The proposed method is based on identification of wear-out sensitive interconnects and selects a small number of measurement points that can be used to observe the state of all the wear-out sensitive interconnects. The method is demonstrated on ISCAS85 benchmark ICs with encouraging results.","PeriodicalId":231389,"journal":{"name":"14th IEEE International Symposium on Design and Diagnostics of Electronic Circuits and Systems","volume":"61 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2011-04-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"14th IEEE International Symposium on Design and Diagnostics of Electronic Circuits and Systems","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/DDECS.2011.5783115","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
In recent IC designs, the risk of early failure due to electromigration wear-out has increased due to reduced feature dimensions. To give a warning of impending failure, wear-out monitoring approaches have included delay measurement circuitry on-chip. Due to the high cost of delay measurement circuitry this paper presents a method to reduce the number of necessary measurement points. The proposed method is based on identification of wear-out sensitive interconnects and selects a small number of measurement points that can be used to observe the state of all the wear-out sensitive interconnects. The method is demonstrated on ISCAS85 benchmark ICs with encouraging results.