A. Ali, H. Madan, M. Barth, M. Hollander, J. B. Boos, B. R. Bennett, S. Datta
{"title":"Antimonide NMOSFET with source side injection velocity of 2.7×107 cm/s for low power high performance logic applications","authors":"A. Ali, H. Madan, M. Barth, M. Hollander, J. B. Boos, B. R. Bennett, S. Datta","doi":"10.1109/VLSIT.2012.6242521","DOIUrl":null,"url":null,"abstract":"Antimonide (Sb) quantum well (QW) MOSFETs are demonstrated with integrated high-κ dielectric (1nmAl<sub>2</sub>O<sub>3</sub>-10nm HfO<sub>2</sub>). The long channel Sb NMOS exhibits effective electron mobility of 6,000 cm<sup>2</sup>/Vs at high field (2 × 10<sup>12</sup> /cm<sup>2</sup> of charge density (N<sub>s</sub>)), which is the highest reported value for any III-V MOSFET. The short channel Sb NMOSFET (L<sub>G</sub> = 150nm) exhibits a cut-off frequency (f<sub>T</sub>) of 120GHz, f<sub>T</sub> - L<sub>G</sub> product of 18GHz.μm and source side injection velocity (v<sub>eff</sub>) of 2.7×10<sup>7</sup> cm/s, at drain bias (V<sub>DS</sub>) of 0.75V and gate overdrive of 0.6V. The measured f<sub>T</sub> and f<sub>T</sub> × L<sub>G</sub> are 2 x higher, and v<sub>eff</sub> is 4× higher than Si NMOS (1.0-1.2V V<sub>DD</sub>) at similar L<sub>G</sub>, and are the highest for any III-V MOSFET.","PeriodicalId":266298,"journal":{"name":"2012 Symposium on VLSI Technology (VLSIT)","volume":"12 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 Symposium on VLSI Technology (VLSIT)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSIT.2012.6242521","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 6
Abstract
Antimonide (Sb) quantum well (QW) MOSFETs are demonstrated with integrated high-κ dielectric (1nmAl2O3-10nm HfO2). The long channel Sb NMOS exhibits effective electron mobility of 6,000 cm2/Vs at high field (2 × 1012 /cm2 of charge density (Ns)), which is the highest reported value for any III-V MOSFET. The short channel Sb NMOSFET (LG = 150nm) exhibits a cut-off frequency (fT) of 120GHz, fT - LG product of 18GHz.μm and source side injection velocity (veff) of 2.7×107 cm/s, at drain bias (VDS) of 0.75V and gate overdrive of 0.6V. The measured fT and fT × LG are 2 x higher, and veff is 4× higher than Si NMOS (1.0-1.2V VDD) at similar LG, and are the highest for any III-V MOSFET.
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