Shimomura, Matsuzawa, Kimura, Hayashi, Hirai, Kanda
{"title":"A mesh-arrayed MOSFET (MA-MOS) for high-frequency analog applications","authors":"Shimomura, Matsuzawa, Kimura, Hayashi, Hirai, Kanda","doi":"10.1109/VLSIT.1997.623701","DOIUrl":null,"url":null,"abstract":"A 0.3 pm Mesh-mayed MaFET(MA-MOS) with ringshaped gate electrode is proposed for high-frequency analog applications. The MA-MOS achieves low noise figure (NFmin) of 0.6 dB at 2 GHz and high maximum oscillation frequency (finax) of 37 GHz, using non-salicide 0.25pm CMOS technology. The parasitic effects of MA-MOS for high frequency performance are farther discussed.","PeriodicalId":414778,"journal":{"name":"1997 Symposium on VLSI Technology","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1997-06-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"11","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"1997 Symposium on VLSI Technology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSIT.1997.623701","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 11
Abstract
A 0.3 pm Mesh-mayed MaFET(MA-MOS) with ringshaped gate electrode is proposed for high-frequency analog applications. The MA-MOS achieves low noise figure (NFmin) of 0.6 dB at 2 GHz and high maximum oscillation frequency (finax) of 37 GHz, using non-salicide 0.25pm CMOS technology. The parasitic effects of MA-MOS for high frequency performance are farther discussed.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
