A novel quasi-dielectrically isolated bipolar transistor using epitaxial lateral overgrowth

Abstract

A new, quasi-dielectrically isolated (QDI) bipolar structure using epitaxial lateral overgrowth (ELO) is presented. A main application for QDI is in power integrated circuits, where isolation of high-power devices and low-power logic is necessary. The ELO-QDI structure uses of combination of dielectric isolation and junction isolation providing better isolation properties than junction isolation, while providing better heat dissipation than dielectric isolation. The ELO silicon was grown at a low-temperature, 950 degrees C, low-pressure, 150 torr, in a RF-heated pancake-type reactor. Fabricated transistors have gains, ideality factors, and leakage currents comparable to those of bulk-devices.<>