CMOS 1/f noise modelling and extraction of BSIM3 parameters using a new extraction procedure

Abstract

1/f noise is investigated in a set of transistors issued from a 0.8 /spl mu/m CMOS technology. Measurements have been analysed versus gate and drain biases. Noise parameters for BSIM3 simulation are extracted in all operating regions using a new extraction procedure. As expected, three noise parameters (NOIA, NOIB and NOIC) can model the noise in all operating regimes. Moreover, it is shown that for the studied transistors, the contribution of NOIC is neglible in the saturation range. Some inaccuracies of the BSIM3v3 noise model are pointed out; in particular, the experimental data indicates that for n-channel MOSFETs, the NOIB parameter is V/sub GS/-V/sub T/ dependent.