{"title":"The dual-gate MOS controlled thyristor with current saturation capability","authors":"M. Mehrotra, B. J. Baliga","doi":"10.1109/ISPSD.1996.509465","DOIUrl":null,"url":null,"abstract":"A new power device structure that combines the characteristics of the MCT and the IGBT is described. The dual-gate MCT behaves as an IGBT or an MCT depending upon the bias applied to one of the gates. Devices with 700 V blocking capability were fabricated and experimentally demonstrated to exhibit low on-state voltage drop in the MCT mode and good FBSOA characteristics in the IGBT mode. Measured on-state voltage drops of 1.5 V were obtained for the thyristor mode with a turn-off time of 15 /spl mu/s. The device transits from the thyristor mode to the IGBT mode in 6 /spl mu/s. No lifetime killing technique was used to control the turn-off time for these devices.","PeriodicalId":377997,"journal":{"name":"8th International Symposium on Power Semiconductor Devices and ICs. ISPSD '96. Proceedings","volume":"51 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1996-05-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"8th International Symposium on Power Semiconductor Devices and ICs. ISPSD '96. Proceedings","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISPSD.1996.509465","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 4
Abstract
A new power device structure that combines the characteristics of the MCT and the IGBT is described. The dual-gate MCT behaves as an IGBT or an MCT depending upon the bias applied to one of the gates. Devices with 700 V blocking capability were fabricated and experimentally demonstrated to exhibit low on-state voltage drop in the MCT mode and good FBSOA characteristics in the IGBT mode. Measured on-state voltage drops of 1.5 V were obtained for the thyristor mode with a turn-off time of 15 /spl mu/s. The device transits from the thyristor mode to the IGBT mode in 6 /spl mu/s. No lifetime killing technique was used to control the turn-off time for these devices.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
