A. Niembro-Martin, D. Mercier, H. Sibuet, B. Dieppedale, C. Baret, C. Bonnard, C. Billard, P. Gardes, P. Poveda
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引用次数: 1
Abstract
This paper presents an analysis of a thin film dielectric characterization method based on the impedance difference of two circular capacitors. For the first time, an error study is detailed in order to define what the best case to use the method is. To illustrate the study, the method has been applied for two dielectrics with extremely different RF properties: silicon nitride (low permittivity and low loss tangent) and Barium Calcium Zirconate Titanate (very high permittivity and high loss tangent).
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