Highly integrated 3-D MMIC technology being applied to novel masterslice GaAs- and Si-MMIC's

T. Tokumitsu, M. Hirano, K. Yamasaki, C. Yamaguchi, M. Aikawa
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引用次数: 12

Abstract

A novel masterslice MMIC design approach employing a 3-D MMIC structure is described using a highly-integrated 17-24 GHz GaAs single-chip receiver and a 7-10 GHz Si reactive-impedance-matching amplifier, which are the most recent devices fabricated with our process. This approach considerably reduces TAT and manufacturing costs.
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高度集成的3-D MMIC技术被应用于新型晶片GaAs和Si-MMIC
采用高集成的17-24 GHz GaAs单芯片接收器和7-10 GHz Si无功阻抗匹配放大器,描述了一种采用三维MMIC结构的新型主片MMIC设计方法,这是我们最新制造的器件。这种方法大大降低了TAT和制造成本。
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