Microstrip thin-film MCM-D technology on high-resistivity silicon with integrated through-substrate vias

G. Posada, G. Carchon, P. Soussan, N. Pham, B. Majeed, D. Sabuncouglu, W. Ruythooren, B. Nauwelaers, W. De Raedt
{"title":"Microstrip thin-film MCM-D technology on high-resistivity silicon with integrated through-substrate vias","authors":"G. Posada, G. Carchon, P. Soussan, N. Pham, B. Majeed, D. Sabuncouglu, W. Ruythooren, B. Nauwelaers, W. De Raedt","doi":"10.1109/EUMC.2007.4405398","DOIUrl":null,"url":null,"abstract":"The integration of through-substrate vias on 100 mum thick high-resistivity silicon (HRSi) wafers within the thin-film multi-chip module technology (MCM-D) is demonstrated in this paper. High quality integrated lumped elements such as thin-film resistors, capacitors and inductors are demonstrated on a microstrip configuration within an MCM-D technology. Microstrip lines integrated on the thin HRSi present a quality factor 2.5 times higher than CPW lines with similar dimensions on AF45 glass, highlighting the advantages of using microstrip type of circuits. High-quality distributed-element bandpass filters at 30 GHz are presented proving the ability of the technology to integrate high frequency circuits as well. Being able to integrate high quality passive components at various frequencies, it is a powerful technology platform for the integration of high performance system in a package (SiP) modules.","PeriodicalId":436391,"journal":{"name":"2007 European Microwave Integrated Circuit Conference","volume":"2005 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2007-12-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2007 European Microwave Integrated Circuit Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EUMC.2007.4405398","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 6

Abstract

The integration of through-substrate vias on 100 mum thick high-resistivity silicon (HRSi) wafers within the thin-film multi-chip module technology (MCM-D) is demonstrated in this paper. High quality integrated lumped elements such as thin-film resistors, capacitors and inductors are demonstrated on a microstrip configuration within an MCM-D technology. Microstrip lines integrated on the thin HRSi present a quality factor 2.5 times higher than CPW lines with similar dimensions on AF45 glass, highlighting the advantages of using microstrip type of circuits. High-quality distributed-element bandpass filters at 30 GHz are presented proving the ability of the technology to integrate high frequency circuits as well. Being able to integrate high quality passive components at various frequencies, it is a powerful technology platform for the integration of high performance system in a package (SiP) modules.
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高电阻率硅微带薄膜MCM-D技术
本文演示了在薄膜多芯片模块技术(MCM-D)中集成100 μ m厚高电阻硅(HRSi)晶圆上的透基通孔。在MCM-D技术的微带配置上演示了高质量集成集总元件,如薄膜电阻器,电容器和电感。集成在薄HRSi上的微带线的质量因子是AF45玻璃上具有相似尺寸的CPW线的2.5倍,突出了使用微带类型电路的优势。提出了高质量的30 GHz分布元件带通滤波器,证明了该技术集成高频电路的能力。它能够集成各种频率的高质量无源元件,是集成高性能系统在一个封装(SiP)模块的强大技术平台。
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