T. Suligoj, Haitao Liu, J. Sin, K. Tsui, K.J. Chen, P. Biljanovic, K. Wang
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引用次数: 5
Abstract
In this paper, we present a scaled transistor processed with the improved technology, resulting in the enhancement of its electrical performance. The electrical characteristics such as collector-emitter breakdown, charge sharing of the processed transistor is presented. The electrical properties of HCBTs are compared with the existing LBTs (Lateral Bipolar Transistors). This HCBT technology was applied in the BiCMOS integration with FinFETs.
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