X.D. Luo, C. Yang, J. Huang, Z. Xu, J. Liu, W. Ge, Y. Zhang, A. Mascarenhas, H. Xin, C. Tu
{"title":"Optical study of electronic states in GaAsN","authors":"X.D. Luo, C. Yang, J. Huang, Z. Xu, J. Liu, W. Ge, Y. Zhang, A. Mascarenhas, H. Xin, C. Tu","doi":"10.1109/COMMAD.2002.1237320","DOIUrl":null,"url":null,"abstract":"GaAs/sub 1-x/N/sub x/ alloys with small N composition (x<1%) and GaAsN/GaAs quantum wells (QWs) were studied by continuous wave photoluminescence (PL), pulse wave excitation PL and time-resolved PL. In the PL spectra an extra transition located at the higher energy side of the commonly reported N-related emissions was observed. By measuring the PL dependence on temperature and excitation power, the new PL peak was identified as a transition of alloy band edge-related recombination in GaAsN and delocalized transition in QWs. The PL dynamics further confirms its intrinsic nature of band edge states rather than N-related bound states.","PeriodicalId":129668,"journal":{"name":"2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601)","volume":"3 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2002-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/COMMAD.2002.1237320","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
GaAs/sub 1-x/N/sub x/ alloys with small N composition (x<1%) and GaAsN/GaAs quantum wells (QWs) were studied by continuous wave photoluminescence (PL), pulse wave excitation PL and time-resolved PL. In the PL spectra an extra transition located at the higher energy side of the commonly reported N-related emissions was observed. By measuring the PL dependence on temperature and excitation power, the new PL peak was identified as a transition of alloy band edge-related recombination in GaAsN and delocalized transition in QWs. The PL dynamics further confirms its intrinsic nature of band edge states rather than N-related bound states.
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