Scaling of oxide-based resistive switching devices

Abstract

Emerging memory technologies are currently under deep investigation as possible replacements of Flash memory and possible new computing memories. Among these novel technologies, resistance switching memory (RRAM) offer fast switching, low voltage operation and low power consumption. On the other hand, important questions about the scaling of RRAM currently remain unanswered. This work addresses RRAM scalability from the viewpoint of switching and read fluctuations due to localized filamentary switching. Switching variability is discussed in terms of few-defect migration, while random current noise is described by bistable defect close to the conductive filament. Models for program/read noise allow to predict the tradeoff between scaling of device size/power and variability.