Hardware Acceleration of Simulated Annealing of Spin Glass by RRAM Crossbar Array

J. Shin, Yeonjoo Jeong, Mohammed Affan Zidan, Qiwen Wang, Wei D. Lu
{"title":"Hardware Acceleration of Simulated Annealing of Spin Glass by RRAM Crossbar Array","authors":"J. Shin, Yeonjoo Jeong, Mohammed Affan Zidan, Qiwen Wang, Wei D. Lu","doi":"10.1109/IEDM.2018.8614698","DOIUrl":null,"url":null,"abstract":"Simulated annealing (SA) was successfully implemented and accelerated by in-memory computing hardware/software package using RRAM crossbar arrays to solve a spin glass problem. Ta2O5-based RRAM array and stochastic Cu-based CBRAM devices were utilized for calculation of the Hamiltonian and decision of spin-flip events, respectively. A parallel spin-flip strategy was demonstrated to further accelerate the SA algorithm.","PeriodicalId":152963,"journal":{"name":"2018 IEEE International Electron Devices Meeting (IEDM)","volume":"32 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"24","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 IEEE International Electron Devices Meeting (IEDM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.2018.8614698","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 24

Abstract

Simulated annealing (SA) was successfully implemented and accelerated by in-memory computing hardware/software package using RRAM crossbar arrays to solve a spin glass problem. Ta2O5-based RRAM array and stochastic Cu-based CBRAM devices were utilized for calculation of the Hamiltonian and decision of spin-flip events, respectively. A parallel spin-flip strategy was demonstrated to further accelerate the SA algorithm.
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
基于RRAM横杆阵列的自旋玻璃模拟退火硬件加速
利用RRAM交叉棒阵列成功实现了模拟退火(SA),并通过内存计算硬件/软件包进行了加速,解决了自旋玻璃问题。基于ta2o5的RRAM阵列和基于cu的随机CBRAM器件分别用于计算自旋翻转事件的哈密顿量和决策。提出了一种平行自旋翻转策略,进一步加快了算法的速度。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
A simulation based study of NC-FETs design: off-state versus on-state perspective Development of X-ray Photoelectron Spectroscopy under bias and its application to determine band-energies and dipoles in the HKMG stack A Si FET-type Gas Sensor with Pulse-driven Localized Micro-heater for Low Power Consumption Effects of Basal Plane Dislocations on SiC Power Device Reliability First Transistor Demonstration of Thermal Atomic Layer Etching: InGaAs FinFETs with sub-5 nm Fin-width Featuring in situ ALE-ALD
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1