Fengjuan Zhang, Qinkai Zeng, Xiaoyu Pan, Mei Bi, Xingmao Yan, Jian Huang, K. Tang, Jijun Zhang, Linjun Wang
{"title":"Preparation and characterization of (110) diamond films used for field-effect transistors","authors":"Fengjuan Zhang, Qinkai Zeng, Xiaoyu Pan, Mei Bi, Xingmao Yan, Jian Huang, K. Tang, Jijun Zhang, Linjun Wang","doi":"10.1117/12.888210","DOIUrl":null,"url":null,"abstract":"In this work, H-terminated (110) diamond film, a novel active material for high-frequency and high-power field-effect transistors (FETs), was successfully prepared by hot filament chemical vapor deposition (HFCVD) method using acetone as carbon source. X-ray diffraction (XRD) measurements showed that at a lower pressure of 2 KPa and a C/H ratio of 40/200, a higher intensity of (110) diffraction peak with a narrower full width at half maximum (FWHM) was detected which meant highly (110) preferential orientation of diamond films. H-terminated films were achieved by the hydrogen gas pressure of 5KPa and a microwave power of 2.4KW. The H-terminated (110) diamond films obtained were suitable for FETs. Hall Effect measurement indicated that the sheet carrier density of (110)-oriented films was 2.2x1013cm-2, and 2.3 times higher than that of the randomly-oriented films.","PeriodicalId":316559,"journal":{"name":"International Conference on Thin Film Physics and Applications","volume":"11 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-10-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Conference on Thin Film Physics and Applications","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1117/12.888210","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
In this work, H-terminated (110) diamond film, a novel active material for high-frequency and high-power field-effect transistors (FETs), was successfully prepared by hot filament chemical vapor deposition (HFCVD) method using acetone as carbon source. X-ray diffraction (XRD) measurements showed that at a lower pressure of 2 KPa and a C/H ratio of 40/200, a higher intensity of (110) diffraction peak with a narrower full width at half maximum (FWHM) was detected which meant highly (110) preferential orientation of diamond films. H-terminated films were achieved by the hydrogen gas pressure of 5KPa and a microwave power of 2.4KW. The H-terminated (110) diamond films obtained were suitable for FETs. Hall Effect measurement indicated that the sheet carrier density of (110)-oriented films was 2.2x1013cm-2, and 2.3 times higher than that of the randomly-oriented films.