A low-noise low-offset CMOS readout circuit for MEMS capacitive accelerometers

Jianghua Chen, Xiaoxin Cui, Xuewen Ni, Bangxian Mo
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引用次数: 2

Abstract

This paper describes a low-noise low-offset CMOS readout circuit for MEMS capacitive accelerometers. It employs a feedback capacitance and a combination of switches to have the input parasitic capacitance and the offset voltage canceled. The raised current IDS of the input differential pair in the first stage is used to help reduce sharply the total low-frequency noises without increasing the complexity of the proposed circuit. The simulation result of the proposed circuit shows that an average 60% noise reduction at low frequencies has been achieved when the current in the current source of the first stage is raised six times the original. The root mean square equivalent input noise voltage is about 6.1nV/rtHz@1kHz. The experimental result shows that the capacitance resolution of the whole readout circuit is 10aF/rtHz@1kHz.
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用于MEMS电容式加速度计的低噪声低偏置CMOS读出电路
介绍了一种用于MEMS电容式加速度计的低噪声低偏置CMOS读出电路。它采用反馈电容和开关组合来抵消输入寄生电容和失调电压。第一级输入差分对的提高电流IDS用于在不增加电路复杂性的情况下帮助大幅降低总低频噪声。仿真结果表明,当第一级电流源中的电流提高到原来的6倍时,该电路的低频噪声平均降低了60%。均方根等效输入噪声电压约为6.1nV/rtHz@1kHz。实验结果表明,整个读出电路的电容分辨率为10aF/rtHz@1kHz。
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