{"title":"Integration of polycide/metal capacitors in advanced device fabrication","authors":"A. Yin, J. White, A. Karroy, Chun Hu","doi":"10.1109/ICSICT.1998.785821","DOIUrl":null,"url":null,"abstract":"Polycide/metal capacitors with high unit area capacitance and high linearity are successfully integrated into submicron CMOS device fabrication. The capacitor implementation is modular and low cost: the capacitor dielectric is deposited at low temperature and only one additional mask is needed for patterning the capacitor top plate. High voltage-capacitance linearity is obtained for the TEOS oxide capacitors of the capacitance density at 1 fF/spl mu/m/sup 2/, with the linear voltage coefficient of capacitance LVCC <5 ppm/V and the quadratic voltage coefficient of capacitance QVCC<2 ppm/V/sup 2/. For the nitride capacitors, 1.5 fF//spl mu/m/sup 2/ unit area capacitance is obtained with the LVCC <70 ppm/V and the QVCC <20 ppm/V/sup 2/.","PeriodicalId":286980,"journal":{"name":"1998 5th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.98EX105)","volume":"39 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1998-10-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"1998 5th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.98EX105)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICSICT.1998.785821","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 7
Abstract
Polycide/metal capacitors with high unit area capacitance and high linearity are successfully integrated into submicron CMOS device fabrication. The capacitor implementation is modular and low cost: the capacitor dielectric is deposited at low temperature and only one additional mask is needed for patterning the capacitor top plate. High voltage-capacitance linearity is obtained for the TEOS oxide capacitors of the capacitance density at 1 fF/spl mu/m/sup 2/, with the linear voltage coefficient of capacitance LVCC <5 ppm/V and the quadratic voltage coefficient of capacitance QVCC<2 ppm/V/sup 2/. For the nitride capacitors, 1.5 fF//spl mu/m/sup 2/ unit area capacitance is obtained with the LVCC <70 ppm/V and the QVCC <20 ppm/V/sup 2/.