A 28 GHz 480 elements digital AAS using GaN HEMT amplifiers with 68 dBm EIRP for 5G long-range base station applications

T. Kuwabara, N. Tawa, Yuichi Tone, T. Kaneko
{"title":"A 28 GHz 480 elements digital AAS using GaN HEMT amplifiers with 68 dBm EIRP for 5G long-range base station applications","authors":"T. Kuwabara, N. Tawa, Yuichi Tone, T. Kaneko","doi":"10.1109/CSICS.2017.8240471","DOIUrl":null,"url":null,"abstract":"This paper reports the design, development and performance of a 28 GHz 480 elements digital Active Antenna System (AAS) prototype for 5G long-range applications. AAS accommodates 32 channels of 0.15 um GaN HEMT power amplifier chains. The antenna array prototype consists of full digitally controlled 32 streams of 15 elements sub-arrays. They can deliver a total conductive power of 41 dBm and Average Effective Isotropically Radiated Power (EIRP) of 68 dBm for the macro-cell coverage at 28 GHz. The prototype also features newly proposed high density heat spreading structure dissipating around 450 W in an 11 liter compact enclosure. The paper proposes and demonstrates one of direction of the high power GaN HEMT application to the millimeter-wave 5G long-range base stations.","PeriodicalId":129729,"journal":{"name":"2017 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":"14 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"20","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CSICS.2017.8240471","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 20

Abstract

This paper reports the design, development and performance of a 28 GHz 480 elements digital Active Antenna System (AAS) prototype for 5G long-range applications. AAS accommodates 32 channels of 0.15 um GaN HEMT power amplifier chains. The antenna array prototype consists of full digitally controlled 32 streams of 15 elements sub-arrays. They can deliver a total conductive power of 41 dBm and Average Effective Isotropically Radiated Power (EIRP) of 68 dBm for the macro-cell coverage at 28 GHz. The prototype also features newly proposed high density heat spreading structure dissipating around 450 W in an 11 liter compact enclosure. The paper proposes and demonstrates one of direction of the high power GaN HEMT application to the millimeter-wave 5G long-range base stations.
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
采用GaN HEMT放大器和68 dBm EIRP的28ghz 480元数字AAS,用于5G远程基站应用
本文报道了用于5G远程应用的28 GHz 480元数字有源天线系统(AAS)原型的设计、开发和性能。AAS可容纳32个通道的0.15 um GaN HEMT功率放大器链。天线阵原型由全数字控制的32流15元子阵组成。它们可以提供41 dBm的总导电功率和68 dBm的平均有效各向同性辐射功率(EIRP),用于28 GHz的宏蜂窝覆盖。原型车还采用了新提出的高密度散热结构,在一个11升的紧凑外壳中耗散约450瓦。提出并论证了高功率GaN HEMT在毫米波5G远程基站中的应用方向之一。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
Electro-thermal characterization of GaN HEMT on Si through selfconsistent energy balance-cellular Monte Carlo device simulations An AC coupled 10 Gb/s LVDS-compatible receiver with latched data biasing in 130 nm SiGe BiCMOS Raytheon high power density GaN technology UHF power conversion with GaN HEMT class-E2 topologies High speed data converters and their applications in optical communication system
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1