Po-Ying Chen, S.L. Chen, M. Tsai, M.H. Jing, T. Lin, W. Yeh
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Abstract
The effects of crystal-originated particles (COPs) on ultra-thin gate oxide for recent ultra large-scale integration (ULSI) devices were studied. Various Czochralski (CZ) silicon wafers were prepared by controlling the pulling speed of silicon ingots to determine the relationships between COPs and the breakdown characteristics of the ultra thin-gate oxide.
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