G. Vlachogiannakis, Charis Basetas, G. Tsirimokou, C. Vassou, Konstantinos Vastarouchas, A. Georgiadou, Ioulia Sotiriou, Timothea Korfiati, S. Sgourenas
{"title":"A Self-Calibrated Fractional-N PLL for WiFi 6 / 802.11ax in 28nm FDSOI CMOS","authors":"G. Vlachogiannakis, Charis Basetas, G. Tsirimokou, C. Vassou, Konstantinos Vastarouchas, A. Georgiadou, Ioulia Sotiriou, Timothea Korfiati, S. Sgourenas","doi":"10.1109/ESSCIRC.2019.8902919","DOIUrl":null,"url":null,"abstract":"This paper presents a fractional-N PLL frequency synthesizer with self-calibration digital loop engines for fast frequency acquisition and noise-driven optimization of loop filter bandwidth, VCO frequency and amplitude control. The PLL is implemented in a 28nm FDSOI CMOS technology and its noise performance is optimized by employing a dual-edge PFD architecture, charge pump linearization, and bias sampling and a spur-less, single-stage multiple feedback sigma delta modulator to achieve a typical rms jitter of 175 fs, while drawing 21 mA from a 1.8-V supply.","PeriodicalId":402948,"journal":{"name":"ESSCIRC 2019 - IEEE 45th European Solid State Circuits Conference (ESSCIRC)","volume":"56 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"ESSCIRC 2019 - IEEE 45th European Solid State Circuits Conference (ESSCIRC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ESSCIRC.2019.8902919","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 6
Abstract
This paper presents a fractional-N PLL frequency synthesizer with self-calibration digital loop engines for fast frequency acquisition and noise-driven optimization of loop filter bandwidth, VCO frequency and amplitude control. The PLL is implemented in a 28nm FDSOI CMOS technology and its noise performance is optimized by employing a dual-edge PFD architecture, charge pump linearization, and bias sampling and a spur-less, single-stage multiple feedback sigma delta modulator to achieve a typical rms jitter of 175 fs, while drawing 21 mA from a 1.8-V supply.