G.G. Lee, K. Fujihara, S. Kim, C. Oh, U. Chung, S.T. Ahn, M.Y. Lee
{"title":"A smart batch type RTA technology for beyond 256 Mbit DRAM","authors":"G.G. Lee, K. Fujihara, S. Kim, C. Oh, U. Chung, S.T. Ahn, M.Y. Lee","doi":"10.1109/VLSIT.1995.520875","DOIUrl":null,"url":null,"abstract":"A new hot wall type rapid thermal annealing (H-RTA) technology using a vertical batch furnace has been developed. This technology provides junctions with shallow and high concentration and slip free process with high throughput. We have demonstrated that H-RTA is a promising candidate for device fabrications beyond 256 Mbit DRAM in cost as well as in performance.","PeriodicalId":328379,"journal":{"name":"1995 Symposium on VLSI Technology. Digest of Technical Papers","volume":"17 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1995-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"1995 Symposium on VLSI Technology. Digest of Technical Papers","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSIT.1995.520875","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
A new hot wall type rapid thermal annealing (H-RTA) technology using a vertical batch furnace has been developed. This technology provides junctions with shallow and high concentration and slip free process with high throughput. We have demonstrated that H-RTA is a promising candidate for device fabrications beyond 256 Mbit DRAM in cost as well as in performance.
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