O. Yamazaki, S. Shimizu, H. Sakamoto, K. Mitsuhashi, K. Ohtake, M. Koba
{"title":"Selective CVD tungsten contact plug technology with plasma pre-treatment","authors":"O. Yamazaki, S. Shimizu, H. Sakamoto, K. Mitsuhashi, K. Ohtake, M. Koba","doi":"10.1109/VMIC.1989.78018","DOIUrl":null,"url":null,"abstract":"Low-resistance contact plug technology using selective CVD of W by the SiH/sub 4/ reduction of WF/sub 6/ with SF/sub 6/ pretreatment was developed. This technology solved problems such as encroachment, wormholes, Si consumption, and poor adhesion encountered in only the H/sub 2/-reduction system or only the SiH/sub 4/-reduction system without pretreatment. The contact resistance in this system is lower than that in conventional metallization with Al-Si/Si contacts. It is predicted that this technology will become important for improving the reliability of the interconnection for submicron VLSI.<<ETX>>","PeriodicalId":302853,"journal":{"name":"Proceedings., Sixth International IEEE VLSI Multilevel Interconnection Conference","volume":"27 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1989-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings., Sixth International IEEE VLSI Multilevel Interconnection Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VMIC.1989.78018","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
Low-resistance contact plug technology using selective CVD of W by the SiH/sub 4/ reduction of WF/sub 6/ with SF/sub 6/ pretreatment was developed. This technology solved problems such as encroachment, wormholes, Si consumption, and poor adhesion encountered in only the H/sub 2/-reduction system or only the SiH/sub 4/-reduction system without pretreatment. The contact resistance in this system is lower than that in conventional metallization with Al-Si/Si contacts. It is predicted that this technology will become important for improving the reliability of the interconnection for submicron VLSI.<>
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