M. Teplechuk, Franck Banag, Barry Mcadam, A. Gribben, Zakaria Mengad
{"title":"A 7.8W continuous and 19.6W burst output power fully integrated 2S Class-D amplifier with 0.005% THD+N","authors":"M. Teplechuk, Franck Banag, Barry Mcadam, A. Gribben, Zakaria Mengad","doi":"10.1109/LASCAS.2016.7451003","DOIUrl":null,"url":null,"abstract":"A fully integrated filterless Class-D audio amplifier with direct two-cell(2S) battery connection delivering continuous 7.8Watt into 4Ohm load with 0.005% THD+N and 104dB SNR. Packaged in 9 ball WLSCP, it does not require any external components and operates in a supply range of 4-12V from a direct 2S battery. In a burst mode device achieves maximum output power of 19.6W into 4Ohm load with THD+N=20% from a 12V supply. The chip is fabricated in a standard 0.25um BCDMOS process with total chip area measuring 2.54mm2.","PeriodicalId":129875,"journal":{"name":"2016 IEEE 7th Latin American Symposium on Circuits & Systems (LASCAS)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-04-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 IEEE 7th Latin American Symposium on Circuits & Systems (LASCAS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/LASCAS.2016.7451003","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
A fully integrated filterless Class-D audio amplifier with direct two-cell(2S) battery connection delivering continuous 7.8Watt into 4Ohm load with 0.005% THD+N and 104dB SNR. Packaged in 9 ball WLSCP, it does not require any external components and operates in a supply range of 4-12V from a direct 2S battery. In a burst mode device achieves maximum output power of 19.6W into 4Ohm load with THD+N=20% from a 12V supply. The chip is fabricated in a standard 0.25um BCDMOS process with total chip area measuring 2.54mm2.