{"title":"A Microstrip Fixture Design for Power GaAs Fets","authors":"R. Lane","doi":"10.1109/ARFTG.1989.323933","DOIUrl":null,"url":null,"abstract":"Small signal,(low power) devices can very adequately be In the new microstrip design the chip is die attached directly to a gold plated copper or brass carrier which is in intimate thermal contact with a finned aluminum heat sink. This results in an \"unblown\" thermal resistance of 3.S°C/Watt and a \"blown\" Rth of 1,6OC/Watt.","PeriodicalId":358927,"journal":{"name":"33rd ARFTG Conference Digest","volume":"75 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1989-06-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"33rd ARFTG Conference Digest","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ARFTG.1989.323933","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Small signal,(low power) devices can very adequately be In the new microstrip design the chip is die attached directly to a gold plated copper or brass carrier which is in intimate thermal contact with a finned aluminum heat sink. This results in an "unblown" thermal resistance of 3.S°C/Watt and a "blown" Rth of 1,6OC/Watt.
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