Nonlinear Analysis and Simulation of a Fet Oscillator

M. Odyniec
{"title":"Nonlinear Analysis and Simulation of a Fet Oscillator","authors":"M. Odyniec","doi":"10.1109/ARFTG.1989.323944","DOIUrl":null,"url":null,"abstract":"The aim of the paper is to present methods of nonlinear analysis and show how can they be applied to oscillator design. We start with a simple but general circuit and we reduce the circuit to generalized van der Pol equations. We then apply the method of averaging and that of harmonic balance . The methods allow us to estimate power and frequency of oscillations. We also show how those two can be affected by the operating point. HP microwave nonlinear sirnulator. In particular the llsddl(l arbitrary nonlinear device)allows us to simplify the FET oscillator and to compare it directly with theoretical results.","PeriodicalId":358927,"journal":{"name":"33rd ARFTG Conference Digest","volume":"21 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1989-06-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"33rd ARFTG Conference Digest","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ARFTG.1989.323944","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
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Abstract

The aim of the paper is to present methods of nonlinear analysis and show how can they be applied to oscillator design. We start with a simple but general circuit and we reduce the circuit to generalized van der Pol equations. We then apply the method of averaging and that of harmonic balance . The methods allow us to estimate power and frequency of oscillations. We also show how those two can be affected by the operating point. HP microwave nonlinear sirnulator. In particular the llsddl(l arbitrary nonlinear device)allows us to simplify the FET oscillator and to compare it directly with theoretical results.
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场效应管振荡器的非线性分析与仿真
本文的目的是介绍非线性分析的方法,并说明如何将它们应用于振荡器设计。我们从一个简单但一般的电路开始,我们将电路简化为广义的范德波尔方程。然后应用平均法和谐波平衡法。该方法使我们能够估计振荡的功率和频率。我们还展示了这两者如何受到操作点的影响。高压微波非线性振荡器。特别是llsddl(l任意非线性器件)使我们能够简化场效应管振荡器,并直接与理论结果进行比较。
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