Calibration and Measurement of Ceramic Microstrip Circuits Using a Wafer Probe Station

J. Wallace, G. A. Ellis
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Abstract

Two methods for calibration and measurement of microstrip circuits fabricated on 10 mil thick alumina will be presented. The first method may be used from 7 to 30 GHz. The second method is best suited for measurements below 10 GHz. The basic measurement configuration consisted of: 1) an automatic network analyzer with thru-reflect-line (TRL) [l] calibration capability; 2) wafer probe station and coplanar probe heads normally used for measurement of GaAs circuits; and 3) microstrip TRL calibration standards with coplanar to microstrip transitions. Data will be presented on two types of coplanar to microstrip transitions including: 1) circuit dimensions; 2) transition data calibrated to the coplanar probe tips; 3) calibration data using microstrip TRL calibrations; 4) repeatability data of the transitions including circuit to circuit variations and substrate to substrate variations; and 5) error estimates.
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基于晶圆探针的陶瓷微带电路校准与测量
本文介绍了在10mil厚的氧化铝上制作的微带电路的两种校准和测量方法。第一种方法可以在7至30 GHz范围内使用。第二种方法最适合于低于10ghz的测量。基本测量配置包括:1)一台具有透反射线(TRL)[1]校准能力的自动网络分析仪;2)通常用于测量砷化镓电路的晶圆探头站和共面探头;3)共面到微带转换的微带TRL校准标准。数据将介绍两种类型的共面到微带转换,包括:1)电路尺寸;2)校准到共面探针尖端的过渡数据;3)标定数据采用微带TRL标定;4)转换的可重复性数据,包括电路到电路的变化和衬底到衬底的变化;5)误差估计。
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High-Throughput, Multi-Function, On-Wafer Test System A Microstrip Fixture Design for Power GaAs Fets Calibration and Measurement of Ceramic Microstrip Circuits Using a Wafer Probe Station Nonlinear Analysis and Simulation of a Fet Oscillator General Purpose Automatic Microwave Measurements
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