Towards CMOS-compatible, solution-processed quantum dot nanocrystal optical sources, modulators, detectors, and optical signal processing elements across the extended communications band 1200-1700 nm
{"title":"Towards CMOS-compatible, solution-processed quantum dot nanocrystal optical sources, modulators, detectors, and optical signal processing elements across the extended communications band 1200-1700 nm","authors":"E. Sargent","doi":"10.1109/GROUP4.2004.1416650","DOIUrl":null,"url":null,"abstract":"We review devices, fabricated using room-temperature solution spin-casting compatible with silicon post-processing, which produce, detect, modulate, and process optical signals in the spectral range from 1200-1700 nm. We first summarize the synthesis of PbS (lead sulphide) quantum dot nanocrystals 2-10 nm in diameter by solution chemistry. We then discusses the realization to date of solution-processed, silicon-compatible thin-film devices fabricated using these materials.","PeriodicalId":299690,"journal":{"name":"First IEEE International Conference on Group IV Photonics, 2004.","volume":"78 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-09-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"First IEEE International Conference on Group IV Photonics, 2004.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/GROUP4.2004.1416650","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
We review devices, fabricated using room-temperature solution spin-casting compatible with silicon post-processing, which produce, detect, modulate, and process optical signals in the spectral range from 1200-1700 nm. We first summarize the synthesis of PbS (lead sulphide) quantum dot nanocrystals 2-10 nm in diameter by solution chemistry. We then discusses the realization to date of solution-processed, silicon-compatible thin-film devices fabricated using these materials.