Process-related reliability issues toward sub-100 nm device regime

2002 23rd International Conference on Microelectronics. Proceedings (Cat. No.02TH8595) Pub Date : 2002-08-07 DOI:10.1109/MIEL.2002.1003159

C. Chang, T. Chao, H. Lin, C. Chien

引用次数: 1

Abstract

Crucial process-related reliability issues, such as boron penetration, plasma charging damage, metal-gate processing, and emerging high-k dielectrics, as device scaling progresses towards sub-100 nm technology nodes are discussed in this paper.

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亚100纳米器件制程相关的可靠性问题

关键工艺相关的可靠性问题，如硼渗透，等离子体充电损伤，金属栅极加工，以及新兴的高k介电体，随着器件规模向亚100纳米技术节点的发展，本文进行了讨论。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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2002 23rd International Conference on Microelectronics. Proceedings (Cat. No.02TH8595)

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