Field transistors electrical behaviour in double level aluminum interconnect processes

Abstract

Summary form only given. A comparison is made of the behavior of metal 2 gate NMOS field transistors using three types of double-level aluminum interconnect isolation process for submicron CMOS application. The three insulators used are permanent spin-on-glass (SOG) process, partial etchback SOG process, and totally sacrificial SOG. Six-transistor-cell CMOS 16 K SRAMs laid out with 0.8- mu m design rules have been processed using the three processes. The total etchback process gives the best results, giving values of I/sub cc/ 10 times lower than that obtained in the permanent SOG process.<>