First demonstration of threshold voltage control by sub-1V back-gate biasing for thin body and buried-oxide (TBB) Ge-on-insulator (GOI) MOSFETs for low-power operation
K. Ikeda, Y. Moriyama, M. Ono, Y. Kamimuta, T. Irisawa, Y. Kamata, A. Sakai, T. Tezuka
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引用次数: 7
Abstract
For the first time, fabrication of TBB-GOI MOSFETs and substantial Vth shifts within 1V back biasing have been demonstrated. The Vth control by extremely low back-gate biases was achieved by using the EOT-scaled BOX structure of ~12nm. This sub-1V back-gate biasing scheme can reduce the power consumption in LSIs without optional voltage supply or charge pump circuits which have large impact to reducing chip size and process cost.
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