A three-transistor model for submicron MOSFET

1989 Proceedings of the IEEE Custom Integrated Circuits Conference Pub Date : 1989-05-15 DOI:10.1109/CICC.1989.56724

S. Wong, H. Lin

引用次数: 0

Abstract

A three-transistor model is presented for simulating threshold voltage reduction due to the charge-sharing effect and damage induced degradation in submicrometer MOSFETs. The channel behavior is treated with three MOSFETs in series. These MOSFETs have different threshold voltages and mobilities due to charge sharing and surface damage. An analytic solution is derived, and the results agree with MINIMOS2 and experimental data. This model is simpler and more computationally efficient for circuit simulation than the usual 2-D numerical modeling approaches

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亚微米MOSFET的三晶体管模型

提出了一种三晶体管模型，用于模拟亚微米mosfet中由于电荷共享效应和损伤诱发退化而导致的阈值电压降低。通道行为由三个串联的mosfet处理。由于电荷共享和表面损伤，这些mosfet具有不同的阈值电压和迁移率。推导了解析解，结果与MINIMOS2和实验数据吻合。该模型比通常的二维数值模拟方法更简单，计算效率更高

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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1989 Proceedings of the IEEE Custom Integrated Circuits Conference

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