{"title":"A novel high current gain lateral PNP transistor on SOI for complementary bipolar technology","authors":"M.J. Kumar, V. Parihar","doi":"10.1109/ISDRS.2003.1272092","DOIUrl":null,"url":null,"abstract":"In order to improve driver performance of PNP transistor high current gain is required but PNP transistor exhibits low current gain due to poor hole mobility. In this paper a novel high current gain lateral PNP transistor on SOI for complementary bipolar technology is presented. The paper also presents the demonstration of a significant current gain enhancement in a PNP transistor using simple surface accumulation layer transistor that is compatible with standard BiCMOS technology.","PeriodicalId":369241,"journal":{"name":"International Semiconductor Device Research Symposium, 2003","volume":"116 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2003-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Semiconductor Device Research Symposium, 2003","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISDRS.2003.1272092","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3
Abstract
In order to improve driver performance of PNP transistor high current gain is required but PNP transistor exhibits low current gain due to poor hole mobility. In this paper a novel high current gain lateral PNP transistor on SOI for complementary bipolar technology is presented. The paper also presents the demonstration of a significant current gain enhancement in a PNP transistor using simple surface accumulation layer transistor that is compatible with standard BiCMOS technology.
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