S. Van Beek, B. O’Sullivan, P. Roussel, R. Degraeve, E. Bury, J. Swerts, S. Couet, L. Souriau, S. Kundu, S. Rao, W. Kim, F. Yasin, D. Crotti, D. Linten, G. Kar
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引用次数: 14
Abstract
At breakdown conditions, large current flows in STT-MRAM devices. We experimentally show that this large current causes significant self-heating of 200-300°C, which impacts the reliability extrapolation to operating conditions. By measuring and analyzing breakdown at various temperatures and on different MgO thickness, we successfully incorporate self-heating into the breakdown model. We find that the 10 year lifetime is underestimated by a factor 103 at 63-percentile, to even 107 when applying percentile scaling to 1 ppm.
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