A. Nichau, E. D. Ozben, M. Schnee, J. Lopes, A. Besmehn, M. Luysberg, L. Knoll, S. Habicht, V. Mussmann, R. Lupták, S. Lenk, J. Rubio‐Zuazo, G. Castro, D. Buca, Q. Zhao, J. Schubert, S. Mantl
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引用次数: 5
Abstract
The chemical reactions at the higher-k LaLuO3/Ti1NX/poly-Si gate stack interfaces are studied after high temperature treatment. A Ti-rich TiN metal layer degrades the gate stack performance after high temperature annealing. The gate stack containing TiN/LaLuO3 with a near stoichiometric TiN layer is stable during 1000 °C, 5s anneals. Both electrical and structural characterization methods are employed to explore the thermal stability of the gate stack. Based on these results an integration of TiN/LaLuO3 in a gatefirst MOSFET process on SOI is shown.
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